| No. |
Part Name |
Description |
Manufacturer |
| 541 |
HY62V8200BLLSR |
HY62V8200B Series 256Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 542 |
HY62V8200BLLSR-E |
HY62V8200B Series 256Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 543 |
HY62V8200BLLSR-I |
HY62V8200B Series 256Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 544 |
HY62V8200BLLST |
HY62V8200B Series 256Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 545 |
HY62V8200BLLST-E |
HY62V8200B Series 256Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 546 |
HY62V8200BLLST-I |
HY62V8200B Series 256Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 547 |
II340-GR |
3 x 4 Cells, Bi-Color Intelligent Ind... |
Infineon |
| 548 |
II340-GY |
3 x 4 Cells, Bi-Color Intelligent Ind... |
Infineon |
| 549 |
II640-GR |
6 x 4 Cells, Bi-Color Intelligent Ind... |
Infineon |
| 550 |
II640-GY |
6 x 4 Cells, Bi-Color Intelligent Ind... |
Infineon |
| 551 |
ISO7821LLS |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 552 |
ISO7821LLSDW |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 553 |
ISO7821LLSDWR |
High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 |
Texas Instruments |
| 554 |
KT830L11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 555 |
KT830L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 556 |
KT830L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 557 |
KT830L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells . Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 558 |
KT830W11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 559 |
KT830W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 560 |
KT830W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 561 |
KT830W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 562 |
KT831L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 563 |
KT831L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 564 |
KT831L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 565 |
KT831W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 566 |
KT831W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 567 |
KT831W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 568 |
KT832L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 569 |
KT832L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 570 |
KT832L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| | | |
