| No. |
Part Name |
Description |
Manufacturer |
| 541 |
BM108N |
βM108N Precision Operational Amplifier |
IPRS Baneasa |
| 542 |
BSM100GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 543 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 544 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 545 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 546 |
BSM100GD120DLC |
IGBT-Module |
Eupec GmbH |
| 547 |
BSM100GD120DN2 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 548 |
BSM100GP60 |
Hochstzulassige Werte / Maximum rated values |
Eupec GmbH |
| 549 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 550 |
BSM101 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
| 551 |
BSM101AR |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
| 552 |
BSM10GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes |
Siemens |
| 553 |
BSM10GP60 |
IGBT-Module |
Eupec GmbH |
| 554 |
BUK7M10-40E |
N-channel 40 V, 10 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 555 |
BUK9M10-30E |
N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 556 |
BYM10-100 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 557 |
BYM10-100 |
Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A |
Vishay |
| 558 |
BYM10-1000 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 559 |
BYM10-1000 |
Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A |
Vishay |
| 560 |
BYM10-200 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 561 |
BYM10-200 |
Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A |
Vishay |
| 562 |
BYM10-400 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 563 |
BYM10-400 |
Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A |
Vishay |
| 564 |
BYM10-50 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 565 |
BYM10-50 |
Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A |
Vishay |
| 566 |
BYM10-600 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 567 |
BYM10-600 |
Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A |
Vishay |
| 568 |
BYM10-800 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 569 |
BYM10-800 |
Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A |
Vishay |
| 570 |
C2M1000170D |
2nd-Generation Z-FET® 1700V, 1 Ω, Silicon-Carbide MOSFET |
Wolfspeed |
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