No. |
Part Name |
Description |
Manufacturer |
541 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
542 |
2N5336 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
543 |
2N5337 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
544 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
545 |
2N5338 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
546 |
2N5339 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
547 |
2N5400 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
548 |
2N5401 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
549 |
2N5449 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
550 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
551 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
552 |
2N5550 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
553 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
554 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
555 |
2N5550BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
556 |
2N5550TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
557 |
2N5550TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
558 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
559 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
560 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
561 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
562 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
563 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
564 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
565 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
566 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
567 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
568 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
569 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
570 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
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