| No. |
Part Name |
Description |
Manufacturer |
| 541 |
HSMB-C172 |
HSMB-C172 · Surface Mount Blue chipLED |
Agilent (Hewlett-Packard) |
| 542 |
HSMB-C191 |
HSMB-C191 · Surface Mount Blue chipLED |
Agilent (Hewlett-Packard) |
| 543 |
HSMB-C192 |
HSMB-C192 · Surface Mount Blue chipLED |
Agilent (Hewlett-Packard) |
| 544 |
HSMB-C196 |
HSMB-C196 · Surface Mount Blue chipLED |
Agilent (Hewlett-Packard) |
| 545 |
IMH20 |
Dual High Current BRT |
ON Semiconductor |
| 546 |
IMH20TR1G |
Dual High Current BRT |
ON Semiconductor |
| 547 |
IRPLCFL8U |
Three Level Dimming CFL Fluorescent Ballast |
International Rectifier |
| 548 |
IRPLDIM3 |
Wide Range Input Linear Dimming Fluorescent Ballast |
International Rectifier |
| 549 |
IRPLDIM5E |
Four Level Switch Dim Fluorescent Ballast |
International Rectifier |
| 550 |
IRPLLNR3 |
Universal Input Linear Fluorescent Ballast using the IR2167 |
International Rectifier |
| 551 |
IRPLLNR4 |
Universal Input Linear Fluorescent Ballast using the IR2166 |
International Rectifier |
| 552 |
IRPLLNR5 |
Universal Input Linear Fluorescent Ballast for 54W TL5 Lamp |
International Rectifier |
| 553 |
IRPLLNR7 |
Universal Input Linear Flourescent Ballast using the IRS2166DPBF |
International Rectifier |
| 554 |
IRPLMB1E |
Mini-ballast for single 25W compact fluorescent ballast, European version with 230VACin |
International Rectifier |
| 555 |
IRS2538DS |
Magnetic Replacement Ballast IC in a 8-Lead SOIC Package |
International Rectifier |
| 556 |
IRS2538DSTRPBF |
Magnetic Replacement Ballast IC in a 8-Lead SOIC Package |
International Rectifier |
| 557 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 558 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 559 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 560 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 561 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 562 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 563 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 564 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 565 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 566 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 567 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 568 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 569 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 570 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
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