| No. |
Part Name |
Description |
Manufacturer |
| 541 |
27C010 |
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 542 |
27C040 |
4 /194 /304-Bit 512K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
| 543 |
281 |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 544 |
284J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 545 |
286J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 546 |
2B20 |
High Performance, 4-20mA Output Voltage-to-Current Converter |
Intronics |
| 547 |
2B22 |
High Performance, Isolated Voltage?to-Current Converter |
Intronics |
| 548 |
2B30 |
High Performance, Economy Strain Gage/RTD Conditioners |
Intronics |
| 549 |
2B31 |
High Performance, Economy Strain Gage/RTD Conditioners |
Intronics |
| 550 |
2N706 |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 551 |
2N706A |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 552 |
2N706B |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 553 |
2SK3530 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 554 |
2SK3530-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 555 |
2SK3679 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 556 |
2SK3683 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 557 |
2SK3683-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 558 |
2STF1550 |
Low voltage high performance NPN power transistors |
ST Microelectronics |
| 559 |
2STF2280 |
Transistors, Power Bipolar, Low Voltage - High Performance |
ST Microelectronics |
| 560 |
2STF2550 |
Low voltage high performance PNP power transistors |
ST Microelectronics |
| 561 |
2STN1550 |
Low voltage high performance NPN power transistors |
ST Microelectronics |
| 562 |
30CTH02 |
200V 20A HyperFast Discrete Diode in a TO-220AB package |
International Rectifier |
| 563 |
30CTH02-1 |
300V 20A HyperFast Discrete Diode in a TO-262 package |
International Rectifier |
| 564 |
30CTH02FP |
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package |
International Rectifier |
| 565 |
30CTH02S |
200V 30A HyperFast Discrete Diode in a D2-Pak package |
International Rectifier |
| 566 |
30CTH03 |
300V 30A HyperFast Discrete Diode in a TO-220AB package |
International Rectifier |
| 567 |
30ETH06 |
600V 30A HyperFast Discrete Diode in a TO-220AC package |
International Rectifier |
| 568 |
30ETH06-1 |
600V 30A HyperFast Discrete Diode in a TO-262 package |
International Rectifier |
| 569 |
30ETH06S |
600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package |
International Rectifier |
| 570 |
32N50Q |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| | | |
