| No. |
Part Name |
Description |
Manufacturer |
| 541 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
| 542 |
10SI4R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V |
IPRS Baneasa |
| 543 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
| 544 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
| 545 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 546 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 547 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
| 548 |
10SI7R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V |
IPRS Baneasa |
| 549 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
| 550 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
| 551 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 552 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 553 |
11-01 |
Outline dimensions package |
Motorola |
| 554 |
12 SIP H/S |
12SIP H/S Package Dimensions |
Samsung Electronic |
| 555 |
1307032 |
QuickMount Micro GPS Patch Antennas |
Tyco Electronics |
| 556 |
1307033 |
OnBoard Micro GPS Patch Antennas |
Tyco Electronics |
| 557 |
1307034 |
Micro GPS Patch Antenna Engines |
Tyco Electronics |
| 558 |
15KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 559 |
15KP |
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) |
Panjit International Inc |
| 560 |
15KP100 |
100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 561 |
15KP100 |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 562 |
15KP100A |
100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 563 |
15KP100A |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 564 |
15KP100C |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 565 |
15KP100CA |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 566 |
15KP110 |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 567 |
15KP110 |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 568 |
15KP110A |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 569 |
15KP110A |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 570 |
15KP110C |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
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