| No. |
Part Name |
Description |
Manufacturer |
| 541 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 542 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 543 |
BF316A |
Epitaxial planar PNP transistor designed for use as oscillator-mixer in TV tuners |
SGS-ATES |
| 544 |
BFG34 |
Silicon-epitaxial NPN transistor designed for wideband application in CATV and MATV |
Philips |
| 545 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 546 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 547 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 548 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 549 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 550 |
BFX11 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 551 |
BFX15 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 552 |
BFX16 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 553 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 554 |
BFX36 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 555 |
BFX70 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 556 |
BFX71 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 557 |
BFX72 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 558 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 559 |
BFX99 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 560 |
BFY81 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 561 |
BFY82 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 562 |
BFY83 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 563 |
BFY84 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 564 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 565 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 566 |
BLV90SL |
UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band |
Philips |
| 567 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 568 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 569 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 570 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
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