| No. |
Part Name |
Description |
Manufacturer |
| 5431 |
PO55-14P-CH1 |
High-density Packaging System(Coaxial Connectors for Hi-PAS Mounting) |
Hirose Electric |
| 5432 |
PO55-2P-316(L) |
High-density Packaging System(Coaxial Connectors for Hi-PAS Mounting) |
Hirose Electric |
| 5433 |
PO55-P-316 |
High-density Packaging System(Coaxial Connectors for Hi-PAS Mounting) |
Hirose Electric |
| 5434 |
PO55-T-1 |
High-density Packaging System(Coaxial Connectors for Hi-PAS Mounting) |
Hirose Electric |
| 5435 |
PR15001 |
50V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5436 |
PR15001S |
50V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5437 |
PR15002 |
100V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5438 |
PR15002S |
100V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5439 |
PR15003 |
200V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5440 |
PR15003S |
200V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5441 |
PR15004 |
400V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5442 |
PR15004S |
400V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5443 |
PR15005 |
600V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5444 |
PR15005S |
600V; 1.5A fast recovery rectifier; fast switching for high efficiency |
Diodes |
| 5445 |
PRECAUTIONS |
Precautions for handling IC Memories, preventing of static electricity, cooling down, absorption of power source noise |
Hitachi Semiconductor |
| 5446 |
PSMN040-100MSE |
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications |
Nexperia |
| 5447 |
PSMN040-100MSE |
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications |
NXP Semiconductors |
| 5448 |
PUSB2X4D |
ESD protection for high-speed interfaces |
Nexperia |
| 5449 |
PUSB2X4D |
ESD protection for high-speed interfaces |
NXP Semiconductors |
| 5450 |
PUSB2X4Y |
ESD protection for high-speed interfaces |
Nexperia |
| 5451 |
PUSB2X4Y |
ESD protection for high-speed interfaces |
NXP Semiconductors |
| 5452 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 5453 |
Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
Siemens |
| 5454 |
Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 5455 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 5456 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 5457 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 5458 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 5459 |
Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching) |
Siemens |
| 5460 |
Q62702-A1050 |
Silicon Switching Diode (For high speed switching applications) |
Siemens |
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