| No. |
Part Name |
Description |
Manufacturer |
| 5461 |
IRAC27951SR |
High Efficiency Resonant Half-Bridge Power Supply with Synchronous Rectification |
International Rectifier |
| 5462 |
IRAM630-1562F |
IPM for Energy Efficient Compressor applications in a SIP-2 Package |
International Rectifier |
| 5463 |
IRAM630-1562F2 |
IPM for Energy Efficient Compressor applications in a SIP-2 Package |
International Rectifier |
| 5464 |
IRDCIP2005A-B |
500kHz 60A DC Sync Buck Converter Reference Design for High Efficiency Applications |
International Rectifier |
| 5465 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5466 |
IRF530 |
100 V,power field effect transistor |
TRANSYS Electronics Limited |
| 5467 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5468 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5469 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5470 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5471 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5472 |
IRF640 |
OBSOLETE - Power Field Effect Transistor |
ON Semiconductor |
| 5473 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5474 |
IRF8252 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
| 5475 |
IRF8252TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
| 5476 |
IRF830 |
Power Field Effect Transistor |
ON Semiconductor |
| 5477 |
IRF830 |
500 V,power field effect transistor |
TRANSYS Electronics Limited |
| 5478 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 5479 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5480 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5481 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5482 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5483 |
IRF9240SMD |
200V Vdss P-Channel FET (field effect transistor) |
SemeLAB |
| 5484 |
IRFD112 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
| 5485 |
IRFD113 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
| 5486 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
| 5487 |
IRFE230 |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
| 5488 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 5489 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 5490 |
IRFF310 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
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