No. |
Part Name |
Description |
Manufacturer |
5461 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
5462 |
MP7001 |
Power Module |
TOSHIBA |
5463 |
MP7002 |
Power Module |
TOSHIBA |
5464 |
MP7003 |
Power Module |
TOSHIBA |
5465 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5466 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5467 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5468 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5469 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5470 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5471 |
MT3S05T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5472 |
MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5473 |
MT3S06T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5474 |
MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5475 |
MT3S07S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5476 |
MT3S07T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5477 |
MT3S07U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5478 |
MT3S08T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
5479 |
MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
5480 |
MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
5481 |
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
5482 |
MT3S113 |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
5483 |
MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
5484 |
MT3S113TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
5485 |
MT3S150P |
Gallium-Arsenide heterojunction bipolar transistor |
TOSHIBA |
5486 |
MT3S15TU |
Radio-frequency bipolar transistor |
TOSHIBA |
5487 |
MT3S16U |
Radio-frequency bipolar transistor |
TOSHIBA |
5488 |
MT3S19 |
Radio-frequency bipolar transistor |
TOSHIBA |
5489 |
MT3S19R |
Radio-frequency bipolar transistor |
TOSHIBA |
5490 |
MT3S19TU |
Radio-frequency bipolar transistor |
TOSHIBA |
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