No. |
Part Name |
Description |
Manufacturer |
5491 |
W01M |
SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5492 |
W01MG |
MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5493 |
W02M |
SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5494 |
W02MG |
MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5495 |
W04M |
SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5496 |
W04MG |
MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5497 |
W06M |
SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5498 |
W06MG |
MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5499 |
W08M |
SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5500 |
W08MG |
MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5501 |
W10M |
SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5502 |
W10MG |
MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
5503 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5504 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5505 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5506 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5507 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5508 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5509 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5510 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5511 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5512 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5513 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5514 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5515 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5516 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5517 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5518 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
5519 |
WE128K32N-120G1UC |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 |
White Electronic Designs |
5520 |
WE128K32N-120G1UCA |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 |
White Electronic Designs |
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