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Datasheets for NIC D

Datasheets found :: 11675
Page: | 180 | 181 | 182 | 183 | 184 | 185 | 186 | 187 | 188 |
No. Part Name Description Manufacturer
5491 W01M SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
5492 W01MG MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS Jinan Gude Electronic Device
5493 W02M SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
5494 W02MG MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS Jinan Gude Electronic Device
5495 W04M SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
5496 W04MG MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS Jinan Gude Electronic Device
5497 W06M SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
5498 W06MG MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS Jinan Gude Electronic Device
5499 W08M SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
5500 W08MG MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS Jinan Gude Electronic Device
5501 W10M SINGLE PHASE 1.5 AMPS. SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
5502 W10MG MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS Jinan Gude Electronic Device
5503 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5504 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5505 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5506 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5507 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5508 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5509 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5510 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5511 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5512 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5513 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5514 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5515 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5516 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5517 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5518 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
5519 WE128K32N-120G1UC Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 White Electronic Designs
5520 WE128K32N-120G1UCA Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 White Electronic Designs


Datasheets found :: 11675
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