| No. |
Part Name |
Description |
Manufacturer |
| 5491 |
3KP90 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 3000 Watt Peak Pulse Power) |
Panjit International Inc |
| 5492 |
3KP90A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 3000 Watt Peak Pulse Power) |
Panjit International Inc |
| 5493 |
3KP90CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 3000 Watt Peak Pulse Power) |
Panjit International Inc |
| 5494 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 5495 |
3N163 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 5496 |
3N164 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 5497 |
3N165 |
Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 5498 |
3N166 |
Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 5499 |
3N170 |
N-channel enchancement mode MOSFET switch. |
Intersil |
| 5500 |
3N171 |
N-channel enchancement mode MOSFET switch. |
Intersil |
| 5501 |
3N172 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Intersil |
| 5502 |
3N173 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Intersil |
| 5503 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 5504 |
3N188 |
DUAL P CHANNEL ENHANCEMENT MODE MOSFET |
Intersil |
| 5505 |
3N189 |
DUAL P CHANNEL ENHANCEMENT MODE MOSFET |
Intersil |
| 5506 |
3N190 |
Dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 5507 |
3N191 |
Dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 5508 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 5509 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
| 5510 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
| 5511 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
| 5512 |
3SK21H |
Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper |
Hitachi Semiconductor |
| 5513 |
3SK30 |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 5514 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 5515 |
3TK28XX |
Safety Integrated Application Manual |
Siemens |
| 5516 |
400CMQ035 |
35V 400A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
| 5517 |
400CMQ040 |
40V 400A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
| 5518 |
400CMQ045 |
45V 400A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
| 5519 |
400CNQ |
SCHOTTKY RECTIFIER |
International Rectifier |
| 5520 |
400CNQ035 |
35V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
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