| No. |
Part Name |
Description |
Manufacturer |
| 5551 |
FMMT415TD |
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 5552 |
FMMT417 |
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 5553 |
FMMT417 |
NPN Avalanche Transistor |
Zetex Semiconductors |
| 5554 |
FMMT417TD |
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
Diodes |
| 5555 |
FP1/2P, 1P, 2P, 3P, 69P |
Pulse Withstanding Protective, Lightning Withstanding Characteristics along with Resistor Functionality, Sharper Fusing Characteristic than the Standard Flameproof Product Line (Fusible), Protects Against Electrical Hazards |
Vishay |
| 5556 |
FP10R06KL4 |
Elektrische Eigenschaften / Electrical properties |
Eupec |
| 5557 |
FP15R06KL4 |
Elektrische Eigenschaften / Electrical properties |
Eupec |
| 5558 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 5559 |
FU-311SPP-CV3 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5560 |
FU-311SPP-CV4 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5561 |
FU-319SPA-6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5562 |
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5563 |
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5564 |
FU-319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5565 |
FU-319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5566 |
FU-319SPP-C6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5567 |
FU-319SPP-CV6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 5568 |
FX5545G108 |
The Smallest and Low Profile, 0.9V to 3.6V, 4A with 570W/in3 Density Power, Efficiency up to 95% DC/DC Buck Coverter |
Vishay |
| 5569 |
FY100-SERIES |
General information about the ECL series FY 100 |
Siemens |
| 5570 |
FZ100-SERIES |
General information about the slow, interference-proof logic series FZ100 (LSL) |
Siemens |
| 5571 |
FZJ101 |
JK master-slave flip-flop with two J and K inputs and N connections on the slave |
Siemens |
| 5572 |
FZJ105 |
JK master-slave flip-flop with two J and K inputs and N connections on the slave |
Siemens |
| 5573 |
GAO10 |
Gunn diode for the frequency range 8 to 14 GHz, datasheet in german language |
Siemens |
| 5574 |
GAO20 |
Gunn diode for the frequency range 8 to 14 GHz, datasheet in german language |
Siemens |
| 5575 |
GAO50 |
Gunn diode for the frequency range 8 to 14 GHz, datasheet in german language |
Siemens |
| 5576 |
GC100 |
Germanium PNP transistor for amplifiers, mixing and oscillator stages in the low and medium frequency range |
RFT |
| 5577 |
GC6001 |
Avalanche Diodes for Noise Generation |
Microsemi |
| 5578 |
GC6002 |
Avalanche Diodes for Noise Generation |
Microsemi |
| 5579 |
GC6003 |
Avalanche Diodes for Noise Generation |
Microsemi |
| 5580 |
GD100-GE100-SERIES |
General information about the GD 100 and GE 100 series |
Siemens |
| | | |
