| No. |
Part Name |
Description |
Manufacturer |
| 5581 |
MCR729-5 |
Fast-switching, high-voltage silicon controlled rectifiers especially designed and characterized for radar, proximity fuse, beacon and similar pulse applications |
Motorola |
| 5582 |
MCR729-6 |
Fast-switching, high-voltage silicon controlled rectifiers especially designed and characterized for radar, proximity fuse, beacon and similar pulse applications |
Motorola |
| 5583 |
MCR729-7 |
Fast-switching, high-voltage silicon controlled rectifiers especially designed and characterized for radar, proximity fuse, beacon and similar pulse applications |
Motorola |
| 5584 |
MCR729-8 |
Fast-switching, high-voltage silicon controlled rectifiers especially designed and characterized for radar, proximity fuse, beacon and similar pulse applications |
Motorola |
| 5585 |
MCR729-9 |
Fast-switching, high-voltage silicon controlled rectifiers especially designed and characterized for radar, proximity fuse, beacon and similar pulse applications |
Motorola |
| 5586 |
MD3250 |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5587 |
MD3250A |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5588 |
MD3250AF |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5589 |
MD3250F |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5590 |
MD3251 |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5591 |
MD3251A |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5592 |
MD3251AF |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5593 |
MD3251F |
Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications |
Motorola |
| 5594 |
MLESD08A-2510 |
Multilayer Polymer ESD Suppressor |
Micro Commercial Components |
| 5595 |
MLESD12A-0402 |
Multilayer Polymer ESD Suppressor |
Micro Commercial Components |
| 5596 |
MLESD12A-1206A4 |
Multilayer Polymer ESD Suppressor |
Micro Commercial Components |
| 5597 |
MLESD24B-0603 |
Multilayer Polymer ESD Suppressor |
Micro Commercial Components |
| 5598 |
MMBZ10VAL |
Low capacitance unidirectional double ESD protection diode |
Nexperia |
| 5599 |
MMBZ10VAL |
Low capacitance unidirectional double ESD protection diodes |
NXP Semiconductors |
| 5600 |
MMBZ12VAL |
Low capacitance unidirectional double ESD protection diode |
Nexperia |
| 5601 |
MMBZ12VAL |
Low capacitance unidirectional double ESD protection diodes |
NXP Semiconductors |
| 5602 |
MMBZ12VDL |
Double ESD protection diodes for transient overvoltage suppression |
Nexperia |
| 5603 |
MMBZ12VDL |
Double ESD protection diodes for transient overvoltage suppression |
NXP Semiconductors |
| 5604 |
MMBZ15VAL |
Low capacitance unidirectional double ESD protection diode |
Nexperia |
| 5605 |
MMBZ15VAL |
Low capacitance unidirectional double ESD protection diodes |
NXP Semiconductors |
| 5606 |
MMBZ15VDA |
Dual Zener Transient Voltage Suppressor Diodes for ESD Protection |
Vishay |
| 5607 |
MMBZ15VDC |
Dual Zener Transient Voltage Suppressor Diodes for ESD Protection |
Vishay |
| 5608 |
MMBZ15VDL |
Double ESD protection diodes for transient overvoltage suppression |
Nexperia |
| 5609 |
MMBZ15VDL |
Double ESD protection diodes for transient overvoltage suppression |
NXP Semiconductors |
| 5610 |
MMBZ16VAL |
High surge current unidirectional double ESD protection diodes |
Nexperia |
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