| No. |
Part Name |
Description |
Manufacturer |
| 5581 |
MWS5101AEL3 |
256-Word x 4-Bit LSI Static RAM |
Intersil |
| 5582 |
MWS5101AEL3X |
256-Word x 4-Bit LSI Static RAM |
Intersil |
| 5583 |
MWS5101DL3X |
256-Word x 4-Bit LSI Static RAM |
Intersil |
| 5584 |
MWS5101EL2 |
256-Word x 4-Bit LSI Static RAM |
Intersil |
| 5585 |
MWS5101ELS |
256-Word x 4-Bit LSI Static RAM |
Intersil |
| 5586 |
MWS5114 |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5587 |
MWS5114D1 |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5588 |
MWS5114D2 |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5589 |
MWS5114D3 |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5590 |
MWS5114D3X |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5591 |
MWS5114E1 |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5592 |
MWS5114E2 |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5593 |
MWS5114E2X |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5594 |
MWS5114E3 |
1024-Word x 4-Bit LSI Static RAM |
Intersil |
| 5595 |
PIC16F54 |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single-word instructions) FLASH-based 8-bit microcontroller packs Microchip’s powerful PICmicro� architecture into an 18-pin package. Easily adapted fo |
Microchip |
| 5596 |
PIC16F57 |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single-word instructions) FLASH-based 8-bit microcontroller packs Microchip’s powerful PICmicro� architecture into a 28-pin package. Easily adapted for |
Microchip |
| 5597 |
S24H30 |
8-word x 8-bit serial NON - VOLATILE RAM |
Seiko Instruments Inc |
| 5598 |
SMJ4464 |
5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 5599 |
SMJ4464-12 |
120ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 5600 |
SMJ4464-15 |
150ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 5601 |
SMJ4464-20 |
200ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 5602 |
T161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 5603 |
TC51WHM516AXBN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 5604 |
TC51WHM516AXBN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 5605 |
TC51WHM516AXGN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 5606 |
TC51WHM516AXGN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 5607 |
TC51WHM616AXBN65 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 5608 |
TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 5609 |
TC51WKM516AXBN75 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 5610 |
TC51WKM516AXGN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| | | |
