| No. |
Part Name |
Description |
Manufacturer |
| 5581 |
E2502H57 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1531.90 nm. Frequency 195.7 THz. |
Agere Systems |
| 5582 |
E2502H58 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1531.15 nm. Frequency 195.8 THz. |
Agere Systems |
| 5583 |
E2502H59 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1530.37 nm. Frequency 195.9 THz. |
Agere Systems |
| 5584 |
E421371 |
Fractional-N PLL Frequency Synthesizer |
Fuji Electric |
| 5585 |
E5530 |
128-Bit IDIC for Radio Frequency Identification |
TEMIC |
| 5586 |
E5530H-232-DOW |
128-Bit IDIC for Radio Frequency Identification |
TEMIC |
| 5587 |
E5530H-232-S8 |
128-Bit IDIC for Radio Frequency Identification |
TEMIC |
| 5588 |
E5530H-ZZZ-DIT |
128-Bit IDIC for Radio Frequency Identification |
TEMIC |
| 5589 |
E5530H-ZZZ-DOW |
128-Bit IDIC for Radio Frequency Identification |
TEMIC |
| 5590 |
E5530H-ZZZ-S8 |
128-Bit IDIC for Radio Frequency Identification |
TEMIC |
| 5591 |
EC3101C |
Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 5592 |
EC3201C |
Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 5593 |
EC3A04B |
N-Channel JFET for Low Frequency General Purpose Amplifier and Impedance Converter Applications |
ON Semiconductor |
| 5594 |
EC3H04C |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications |
SANYO |
| 5595 |
EC3H08B |
Ultrahigh-Frequency Transistors |
SANYO |
| 5596 |
EC3H09B |
Ultrahigh-Frequency Transistors |
SANYO |
| 5597 |
EC3H10B |
Ultrahigh-Frequency Transistors |
SANYO |
| 5598 |
EC3H11B |
Ultrahigh-Frequency Transistors |
SANYO |
| 5599 |
EC4H07C |
Ultrahigh-Frequency Transistors |
SANYO |
| 5600 |
ECLSOIC8EVB |
Evaluation Board Manual for High Frequency SOIC 8 |
ON Semiconductor |
| 5601 |
EF6840P |
Frequency clock 1 MHz Programmable Timer ? 1MHz |
SGS Thomson Microelectronics |
| 5602 |
EFT124 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
| 5603 |
EFT125 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
| 5604 |
EFT130 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
| 5605 |
EFT131 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
| 5606 |
EFT212 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 5607 |
EFT212 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 5608 |
EFT213 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 5609 |
EFT213 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 5610 |
EFT214 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| | | |
