| No. |
Part Name |
Description |
Manufacturer |
| 5581 |
BFG23 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
| 5582 |
BFG32 |
Silicon planar epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
| 5583 |
BFG34 |
Silicon-epitaxial NPN transistor designed for wideband application in CATV and MATV |
Philips |
| 5584 |
BFG51 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
| 5585 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
| 5586 |
BFG96 |
Silicon planar epitaxial NPN transistor wideband application up to 2GHz |
Philips |
| 5587 |
BFN22 |
Surface mount Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 5588 |
BFN23 |
Surface mount Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 5589 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
| 5590 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 5591 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
| 5592 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
| 5593 |
BFQ32S |
Silicon planar epitaxial PNP transistor, intended for use in UHF applications |
Philips |
| 5594 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
| 5595 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 5596 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
| 5597 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
| 5598 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
| 5599 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 5600 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 5601 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 5602 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 5603 |
BFR37 |
Epitaxial planar NPN transistor, very high fT and very low Cre |
SGS-ATES |
| 5604 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 5605 |
BFR57 |
NPN Epitaxial Planar Silicon Transistor |
Texas Instruments |
| 5606 |
BFR58 |
NPN Epitaxial Planar Silicon Transistor |
Texas Instruments |
| 5607 |
BFR59 |
NPN Epitaxial Planar Silicon Transistor |
Texas Instruments |
| 5608 |
BFR90 |
NPN silicon planar epitaxial transistor in a subminiature plastic transfer-moulded T-package |
Philips |
| 5609 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 5610 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
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