| No. |
Part Name |
Description |
Manufacturer |
| 5641 |
IRF121 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 5642 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
| 5643 |
IRFF121 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 6A |
Siliconix |
| 5644 |
IRFF9121 |
MOSPOWER P-Channel Enhancement Mode Transistor 60V |
Siliconix |
| 5645 |
IS121 |
6V; 50mA optically coupled isolator |
ISOCOM |
| 5646 |
IS61LF51218D-10B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5647 |
IS61LF51218D-10TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5648 |
IS61LF51218D-10TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5649 |
IS61LF51218D-8.5B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5650 |
IS61LF51218D-8.5TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5651 |
IS61LF51218D-8.5TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5652 |
IS61LF51218D-9B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5653 |
IS61LF51218D-9TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5654 |
IS61LF51218D-9TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5655 |
IS61LF51218T-10TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5656 |
IS61LF51218T-10TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5657 |
IS61LF51218T-8.5TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5658 |
IS61LF51218T-8.5TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5659 |
IS61LF51218T-9TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5660 |
IS61LF51218T-9TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 5661 |
IS61LPD51218D-133B |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5662 |
IS61LPD51218D-133TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5663 |
IS61LPD51218D-133TQI |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5664 |
IS61LPD51218D-150B |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5665 |
IS61LPD51218D-150TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5666 |
IS61LPD51218D-5B |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5667 |
IS61LPD51218D-5TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5668 |
IS61LPD51218D-5TQI |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5669 |
IS61LPD51218T-133TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 5670 |
IS61LPD51218T-133TQI |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
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