| No. |
Part Name |
Description |
Manufacturer |
| 5671 |
ROS05B |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5672 |
ROS05C |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5673 |
ROS05D |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5674 |
ROS7N |
N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
| 5675 |
RVM35A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5676 |
RVM35A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5677 |
RVM35B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5678 |
RVM35B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5679 |
RVM60A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5680 |
RVM60A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5681 |
RVM60B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5682 |
RVM60B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5683 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
| 5684 |
S525 |
N-Channel MOS-Fieldeffect Triode/ Depletion Mode |
Vishay |
| 5685 |
S525T |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 5686 |
S525TW |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 5687 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 5688 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR Data Sheet |
Samsung Electronic |
| 5689 |
S5A1901H02-Q0R0 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 5690 |
SAA1099 |
Microprocessor Controlled Stereo Sound Generator for Sound Effect and Music Synthesis |
Philips |
| 5691 |
SBV525 |
Hall-effect devices for measuring AC und DC magnetic fields |
Siemens |
| 5692 |
SBV552 |
Hall-effect device measuring axial magnetic field |
Siemens |
| 5693 |
SBV566 |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
| 5694 |
SBV570 |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
| 5695 |
SBV579 |
Hall-effect devices for measuring AC und DC magnetic fields |
Siemens |
| 5696 |
SBV595 |
Hall-effect devices for measuring AC und DC magnetic fields |
Siemens |
| 5697 |
SC5387 |
5-9V 3D effect audio processor IC |
Silan Semiconductors |
| 5698 |
SC5387S |
5-9V 3D effect audio processor IC |
Silan Semiconductors |
| 5699 |
SD1920-02 |
Gold metalliezed N-Channel MOS field-effect RF power transistor 50V, up to 200MHz 300W Class AB |
SGS Thomson Microelectronics |
| 5700 |
SD1930 |
Gold metallized N-Channel MOS field-effect RF transistor 28V 400MHz 5W |
SGS Thomson Microelectronics |
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