No. |
Part Name |
Description |
Manufacturer |
5671 |
KM416C1204CJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
5672 |
KM416C1204CT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
5673 |
KM416C1204CT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
5674 |
KM416C1204CT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
5675 |
KM416C1204CT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
5676 |
KM416C1204CT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
5677 |
KM416C1204CT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
5678 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
5679 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
5680 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
5681 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
5682 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
5683 |
KM416RD8AD-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
5684 |
KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
5685 |
KM416RD8AS-RM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
5686 |
KM416RD8AS-SCM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
5687 |
KM416RD8AS-SM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
5688 |
KM416V1004A |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5689 |
KM416V1004A-6 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5690 |
KM416V1004A-7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5691 |
KM416V1004A-8 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5692 |
KM416V1004A-F6 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5693 |
KM416V1004A-F7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5694 |
KM416V1004A-F8 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5695 |
KM416V1004A-L6 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5696 |
KM416V1004A-L7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5697 |
KM416V1004A-L8 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
5698 |
KM416V1004AJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
5699 |
KM416V1004AJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
5700 |
KM416V1004AJ-8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
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