| No. |
Part Name |
Description |
Manufacturer |
| 5701 |
15KP16A |
Diode TVS Single Uni-Dir 16V 15KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 5702 |
15KP16C |
Diode TVS Single Bi-Dir 16V 15KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 5703 |
15KP16CA |
Diode TVS Single Bi-Dir 16V 15KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 5704 |
15KP17 |
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 5705 |
15KP170 |
170V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5706 |
15KP170 |
Diode TVS Single Uni-Dir 170V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5707 |
15KP170 |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
| 5708 |
15KP170A |
170V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5709 |
15KP170A |
Diode TVS Single Uni-Dir 170V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5710 |
15KP170A |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 5711 |
15KP170C |
Diode TVS Single Bi-Dir 170V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5712 |
15KP170C |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
| 5713 |
15KP170CA |
Diode TVS Single Bi-Dir 170V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5714 |
15KP170CA |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 5715 |
15KP17A |
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 5716 |
15KP17C |
Diode TVS Single Bi-Dir 17V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5717 |
15KP17CA |
Diode TVS Single Bi-Dir 17V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5718 |
15KP18 |
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 5719 |
15KP180 |
180V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5720 |
15KP180 |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5721 |
15KP180 |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 5722 |
15KP180A |
180V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5723 |
15KP180A |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5724 |
15KP180A |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 5725 |
15KP180C |
Diode TVS Single Bi-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5726 |
15KP180C |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 5727 |
15KP180CA |
Diode TVS Single Bi-Dir 180V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5728 |
15KP180CA |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 5729 |
15KP18A |
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 5730 |
15KP18C |
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
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