| No. |
Part Name |
Description |
Manufacturer |
| 5701 |
SB30-45-258RM |
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS |
SemeLAB |
| 5702 |
SB30-45AM |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS |
SemeLAB |
| 5703 |
SB30-45M |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS |
SemeLAB |
| 5704 |
SB30-45RM |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS |
SemeLAB |
| 5705 |
SB3229 |
Rhythm SB3229 Pre-configured DSP System for Hearing Aids |
ON Semiconductor |
| 5706 |
SB3230 |
Rhythm SB3230 Pre-configured DSP System for Hearing Aids |
ON Semiconductor |
| 5707 |
SB3231 |
Rhythm SB3231 Pre-configured DSP System for Hearing Aids |
ON Semiconductor |
| 5708 |
SB35-40M |
DUAL SCHOTTKY BARRIER DIODE IN TO254 METAL PACKAGE FOR HI-REL APPLICATIONS |
SemeLAB |
| 5709 |
SB35-45M |
DUAL SCHOTTKY BARRIER DIODE IN TO254 METAL PACKAGE FOR HI-REL APPLICATIONS |
SemeLAB |
| 5710 |
SB60-100 |
DUAL SCHOTTKY BARRIER RECTIFIER IN A TO-258 HERMETICALLY SEALED PACKAGE FOR HI.REL APPLICATIONS |
SemeLAB |
| 5711 |
SB60-60 |
DUAL SCHOTTKY BARRIER RECTIFIER IN A TO-258 HERMETICALLY SEALED PACKAGE FOR HI.REL APPLICATIONS |
SemeLAB |
| 5712 |
SB60-600 |
DUAL SCHOTTKY BARRIER RECTIFIER IN A TO-258 HERMETICALLY SEALED PACKAGE FOR HI.REL APPLICATIONS |
SemeLAB |
| 5713 |
SBA120-18J |
Dual 180 V, 12 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 5714 |
SBR100-10J |
Dual 100 V, 10 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 5715 |
SBR1645-T254 |
DUAL SCHOTTKY BARRIER RECTIFIER IN A TO254 HERMETICALLY SEALED PACKAGE FOR HI-REL APPLICATIONS |
SemeLAB |
| 5716 |
SD014EVK |
Adaptive Cable Equalizer for High-Speed Data Recovery |
National Semiconductor |
| 5717 |
SD1420-01 |
860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications |
SGS Thomson Microelectronics |
| 5718 |
SD1504 |
1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band |
SGS Thomson Microelectronics |
| 5719 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
| 5720 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
| 5721 |
SD1536-03 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5722 |
SD1536-08 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5723 |
SD1850 |
2.3GHz 0.2W 15V NPN silicon transistor designed for high gain linear performance at 2.0GHz |
SGS Thomson Microelectronics |
| 5724 |
SD1851 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5725 |
SD1851-04 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5726 |
SD1853 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5727 |
SF1500GX23 |
V(drm): 4000V; V(rrm): 4000V; 1500A; 30W; thyristor. For high power control applications |
TOSHIBA |
| 5728 |
SFC4145E |
BCD to decimal decoder/driver with open collector high voltage outputs |
SESCOSEM |
| 5729 |
SFC4145ET |
BCD to decimal decoder/driver with open collector high voltage outputs |
SESCOSEM |
| 5730 |
SFC445E |
BCD to decimal decoder/driver with open collector high voltage outputs |
SESCOSEM |
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