| No. |
Part Name |
Description |
Manufacturer |
| 5701 |
2SK362 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 5702 |
2SK363 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 5703 |
2SK364 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 5704 |
2SK365 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 5705 |
2SK366 |
Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 5706 |
2SK3662 |
Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications |
TOSHIBA |
| 5707 |
2SK3669 |
Field Effect Transistor Silicon N Channel MOS Type (PI-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive Applications |
TOSHIBA |
| 5708 |
2SK367 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications |
TOSHIBA |
| 5709 |
2SK368 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency and High Voltage Amplifier Applications Constant Current Applications |
TOSHIBA |
| 5710 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 5711 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 5712 |
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 5713 |
2SK372 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 5714 |
2SK373 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications |
TOSHIBA |
| 5715 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 5716 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 5717 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 5718 |
2SK879 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
| 5719 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 5720 |
2SK881 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 5721 |
2SK882 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 5722 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 5723 |
3000YKD23 |
THYRISTOR SILICON DIFFUSED TYPE (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5724 |
30S |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
Microsemi |
| 5725 |
30S5 |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
Microsemi |
| 5726 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5727 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5728 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5729 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5730 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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