| No. |
Part Name |
Description |
Manufacturer |
| 5701 |
SFH214FA |
Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5702 |
SFH216 |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5703 |
SFH229 |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5704 |
SFH229F |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5705 |
SFH229FA |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5706 |
SFH2540 |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5707 |
SFH2540FA |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5708 |
SFH2545 |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5709 |
SFH2545FA |
Silicon PIN photodiode with very short switching time |
Siemens |
| 5710 |
SFH2801 |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time |
Siemens |
| 5711 |
SGSD310 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 5712 |
SGSD311 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 5713 |
SGSD311FI |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 5714 |
SGSF344 |
V(ces): 1200V; V(ceo): 600V; V(ebo): 7V; 7A; 85W; high voltage fast switching NPN power transistor. For switch mode power supplies, horizontal deflection for colour TVsand monitors |
SGS Thomson Microelectronics |
| 5715 |
SGSF461 |
125W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 5716 |
SGSF561 |
150W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 5717 |
SGSIF461 |
65W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 5718 |
SH1605S |
V(in/out): 5V; 6A max; 20W; efficient switching regulator |
Fairchild Semiconductor |
| 5719 |
SI3831DV |
Bi-Directional P-Channel MOSFET/Battery Disconnect Switch |
Vishay |
| 5720 |
SI4300DY |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky |
Vishay |
| 5721 |
SI4390DY |
N-Channel Reduced Qg, Fast Switching WFET |
Vishay |
| 5722 |
SI4392DY |
N-Channel Reduced Qg, Fast Switching WFET |
Vishay |
| 5723 |
SI4392DY-E3 |
N-Channel Reduced Qg/ Fast Switching WFET |
Vishay |
| 5724 |
SI4392DY-T1 |
N-Channel Reduced Qg/ Fast Switching WFET |
Vishay |
| 5725 |
SI4392DY-T1-E3 |
N-Channel Reduced Qg/ Fast Switching WFET |
Vishay |
| 5726 |
SI4710CY |
Battery Disconnect Switch |
Vishay |
| 5727 |
SI4719CY |
Battery Disconnect Switch |
Vishay |
| 5728 |
SI4720CY |
Battery Disconnect Switch |
Vishay |
| 5729 |
SI4800BDY |
N-Channel Reduced Qg, Fast Switching MOSFET |
Vishay |
| 5730 |
SI4850EY-E3 |
N-Channel Reduced Qg/ Fast Switching MOSFET |
Vishay |
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