| No. |
Part Name |
Description |
Manufacturer |
| 571 |
SB100-09K |
Schottky Barrier Diode (Twin Type � Cathode Common) 90V, 10A Rectifier |
SANYO |
| 572 |
SB100-18 |
180V, 10A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 573 |
SBA100-04J |
Schottky Barrier Diode (Twin Type � Cathode Common) 40V, 10A Rectifier |
SANYO |
| 574 |
SBA100-04Y |
Schottky Barrier Diode (Twin Type � Cathode Common) 40V, 10A Rectifier |
SANYO |
| 575 |
SBA100-09J |
Schottky Barrier Diode (Twin Type � Cathode Common) 90V, 10A Rectifier |
SANYO |
| 576 |
SBA100-09Y |
Schottky Barrier Diode (Twin Type � Cathode Common) 90V, 10A Rectifier |
SANYO |
| 577 |
SD1030CS-T3 |
Reverse voltage: 20.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 578 |
SD1040CS-T3 |
Reverse voltage: 20.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 579 |
SD1050CS-T3 |
Reverse voltage: 50.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 580 |
SD1060CS-T3 |
Reverse voltage: 60.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 581 |
SD1080CS-T3 |
Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 582 |
SDB10S30SMD |
Silicon Carbide Schottky Diodes - 10A diode in TO263 package |
Infineon |
| 583 |
SDP10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package |
Infineon |
| 584 |
SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package |
Infineon |
| 585 |
SDT10S60 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package |
Infineon |
| 586 |
SDT7A01 |
Trans GP BJT NPN 150V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 587 |
SDT7A02 |
Trans GP BJT NPN 150V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 588 |
SDT7A03 |
Trans GP BJT NPN 150V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 589 |
SF10B12 |
Silicon alloy-diffused junction thyristor 10A 100V |
TOSHIBA |
| 590 |
SF10D12 |
Silicon alloy-diffused junction thyristor 10A 200V |
TOSHIBA |
| 591 |
SF10F12 |
Silicon alloy-diffused junction thyristor 10A 300V |
TOSHIBA |
| 592 |
SF10G12 |
Silicon alloy-diffused junction thyristor 10A 400V |
TOSHIBA |
| 593 |
SF10J12 |
Silicon alloy-diffused junction thyristor 10A 600V |
TOSHIBA |
| 594 |
SF10L12 |
Silicon alloy-diffused junction thyristor 10A 800V |
TOSHIBA |
| 595 |
SF10N12 |
Silicon alloy-diffused junction thyristor 10A 1000V |
TOSHIBA |
| 596 |
SFP740 |
125W Power MOSFET, 400V Vdss, 10A Id, 0.55Om Rds |
SemiWell Semiconductor |
| 597 |
SGB10N60A |
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT |
Infineon |
| 598 |
SGP10N60A |
IGBTs & DuoPacks - 10A 600V TO220AB IGBT |
Infineon |
| 599 |
SGW10N60A |
IGBTs & DuoPacks - 10A 600V TO247AC IGBT |
Infineon |
| 600 |
SIDC03D30SIC2(SAWN) |
Diodes - HV Chips - 300V, 10A die sawn |
Infineon |
| | | |
