No. |
Part Name |
Description |
Manufacturer |
571 |
CNY34X |
PHOTON COUPLED ISOLATOR Ga As LIGHT ACTIVATED SCR |
ISOCOM |
572 |
CQY11B |
Electroluminiscent Ga As diode |
Mullard |
573 |
CQY11C |
Electroluminiscent Ga As diode |
Mullard |
574 |
CQY12B |
Electroluminiscent Ga As diode |
Mullard |
575 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
576 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
577 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
578 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
579 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
580 |
CY2305SC-1 |
CY2305 and CY2309 as PCI and SDRAM Buffers |
Cypress |
581 |
CY2309 |
CY2305 and CY2309 as PCI and SDRAM Buffers |
Cypress |
582 |
CY7C1062AV33-8BGI |
The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. |
Cypress |
583 |
CZ80PIO |
Hereinafter Referred to As PIO, is a Dual-Port Device |
etc |
584 |
DS_S1T2410B01 |
bipolar integrated circuit designed as a telephone bell replacement |
Samsung Electronic |
585 |
DS_S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
586 |
E202075_HD404889 |
Low-Voltage AS Microcomputers with On-Chip LCD Circuit |
Renesas |
587 |
E702360_SH7058 |
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. |
Renesas |
588 |
EB350 |
Primarily as an Expanded Mode Microcontroller |
Freescale (Motorola) |
589 |
EBC |
Aluminum Electrolytic Capacitors, Axial Capacitor Style EBC/EGC Solder Ring Termination as EGC03 |
Vishay |
590 |
EBM |
Aluminum Electrolytic Capacitors, Axial Miniature Capacitor Style ELM/EBM/EGM, Solder Ring Termination as EGM03 |
Vishay |
591 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
592 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
593 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
594 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
595 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
596 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
597 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
598 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
599 |
EGC |
Aluminum Electrolytic Capacitors, Axial Capacitor Style EBC/EGC Solder Ring Termination as EGC03 |
Vishay |
600 |
EGM |
Aluminum Electrolytic Capacitors, Axial Miniature Capacitor Style ELM/EBM/EGM, Solder Ring Termination as EGM03 |
Vishay |
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