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Datasheets found :: 3961
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No. Part Name Description Manufacturer
571 HJ4-L-T-DC110V HJ-relay. Miniature relay for wide applications. Without Au plating type. Plug-in type (with LED indication and test button). 4 form C. Coil voltage 110 V DC. Matsushita Electric Works(Nais)
572 HJ4-T-AC100V HJ-relay. Miniature relay for wide applications. Without Au plating type. Plug-in type (with test button). 4 form C. Coil voltage 100 V AC. Matsushita Electric Works(Nais)
573 HJ4-T-AC120V HJ-relay. Miniature relay for wide applications. Without Au plating type. Plug-in type (with test button). 4 form C. Coil voltage 120 V AC. Matsushita Electric Works(Nais)
574 HJ4-T-AC200V HJ-relay. Miniature relay for wide applications. Without Au plating type. Plug-in type (with test button). 4 form C. Coil voltage 200 V AC. Matsushita Electric Works(Nais)
575 HJ4-T-AC220_240V HJ-relay. Miniature relay for wide applications. Without Au plating type. Plug-in type (with test button). 4 form C. Coil voltage 220/240 V AC. Matsushita Electric Works(Nais)
576 HJ4-T-DC110V HJ-relay. Miniature relay for wide applications. Without Au plating type. Plug-in type (with test button). 4 form C. Coil voltage 110 V DC. Matsushita Electric Works(Nais)
577 HMS91C7132 Microcontroller for monitor with DDC, 12C, PWM, ADC and Sync. processor. 32K bytes of ROM, 256 bytes of RAM and 256 bytes of AUX-RAM. Hynix Semiconductor
578 HMS97C7132 Microcontroller for monitor with DDC, 12C, PWM, ADC and Sync. processor. 32K bytes of OTP ROM, 256 bytes of RAM and 256 bytes of AUX-RAM. Hynix Semiconductor
579 HSH2501NILO Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). PerkinElmer Optoelectronics
580 HSH2510NILO Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). PerkinElmer Optoelectronics
581 ICE2A0565 Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7 Infineon
582 ICE2A0565Z Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7 Infineon
583 ICE2A165 Integrated Power ICs - max. Pout=18W, fop=100kHz, Vbreak=650V, DIP8 Infineon
584 ICE2A180Z Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7 Infineon
585 ICE2A265 Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8 Infineon
586 ICE2A280Z Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7 Infineon
587 ICE2A365 Integrated Power ICs - max. Pout=45W, fop=100kHz, Vbreak=650V, DIP8 Infineon
588 ICE2A765I Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220 Infineon
589 ICE2A765P Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220 Infineon
590 ICE2A765P2 Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220 Infineon
591 ICE2B165 Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8 Infineon
592 ICE2B265 Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8 Infineon
593 ICE2B365 Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8 Infineon
594 ICE2B765I Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220 Infineon
595 ICE2B765P Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220 Infineon
596 ICE2B765P2 Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220 Infineon
597 IRS4427 Dual Low Side Driver, low voltage, high speed power MOSFET and IGBT drivers, Outputs in phase with inputs. Packaged in an SO-8 International Rectifier
598 IRS44273 Single Low Side Driver, low voltage, high speed power MOSFET and IGBT drivers, Outputs in phase with inputs. Packaged in a 5-Lead SOT-23 International Rectifier
599 IRS44273LTRPBF Single Low Side Driver, low voltage, high speed power MOSFET and IGBT drivers, Outputs in phase with inputs. Packaged in a 5-Lead SOT-23 International Rectifier
600 IRS4427SPBF Dual Low Side Driver, low voltage, high speed power MOSFET and IGBT drivers, Outputs in phase with inputs. Packaged in an SO-8 International Rectifier


Datasheets found :: 3961
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