| No. |
Part Name |
Description |
Manufacturer |
| 571 |
1N6105 |
Diode TVS Single Bi-Dir 6.9V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 572 |
1N6105 |
500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS |
Semtech |
| 573 |
1N6305 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 574 |
1N6305 |
Diode Switching 100V 70A 2-Pin DO-5 |
New Jersey Semiconductor |
| 575 |
1N6705 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 576 |
1N705 |
Zener Diode |
Motorola |
| 577 |
1N805 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 578 |
1N805 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 579 |
1N805 |
Germanium Signal Diode |
Motorola |
| 580 |
1N905 |
Silicon Planar Diode |
ITT Semiconductors |
| 581 |
1N905 |
Silicon Signal Diode |
Motorola |
| 582 |
1PM05 |
Single-phase rectifier bridges |
IPRS Baneasa |
| 583 |
1PM05 |
Rectifier single phase bridge 1A |
IPRS Baneasa |
| 584 |
1PM05 |
1.2A Single Phase Rectifier Bridge 50V |
IPRS Baneasa |
| 585 |
1PMT4105 |
Zener Voltage Regulator Diode |
Microsemi |
| 586 |
1PMT5305 |
Current Limiter Diode |
Microsemi |
| 587 |
1PS89SS05 |
High-speed double diodes |
Philips |
| 588 |
1S105 |
Diffused silicon rectifier 750mA 600V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
| 589 |
1S105 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
| 590 |
1SS205 |
Silicon Diode |
NEC |
| 591 |
1SS305 |
Silicon switching diode |
NEC |
| 592 |
1SS405 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 593 |
1SV305 |
Variable Capacitance Diode VCO for VHF Band Radio |
TOSHIBA |
| 594 |
1T405 |
Variable Capacitance Diode |
SONY |
| 595 |
1W005 |
SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 596 |
1W005 |
Bridge: Standard |
Taiwan Semiconductor |
| 597 |
2-2W5I-AT505 |
WATER COOLED A.C. SWITCH |
POSEICO SPA |
| 598 |
2-2W5I-AT505 |
WATERCOOLEDA.C.SWITCH |
Powerex Power Semiconductors |
| 599 |
2005 |
5 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 600 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| | | |
