| No. |
Part Name |
Description |
Manufacturer |
| 571 |
PCN11FB-24S-2.54WB-2 |
PCN10F Series (Product Compliant with DIN Standard: Coaxial and High Current Contact Composite Type) |
Hirose Electric |
| 572 |
PCN11FB-42S-2.54PFB-2 |
PCN10F Series (Product Compliant with DIN Standard: Coaxial and High Current Contact Composite Type) |
Hirose Electric |
| 573 |
PCN11FB-42S-2.54WB-2 |
PCN10F Series (Product Compliant with DIN Standard: Coaxial and High Current Contact Composite Type) |
Hirose Electric |
| 574 |
PCN11FB-60S-2.54PFB-2 |
PCN10F Series (Product Compliant with DIN Standard: Coaxial and High Current Contact Composite Type) |
Hirose Electric |
| 575 |
PCN11FB-60S-2.54WB-2 |
PCN10F Series (Product Compliant with DIN Standard: Coaxial and High Current Contact Composite Type) |
Hirose Electric |
| 576 |
PCN11FB-78S-2.54PFB-2 |
PCN10F Series (Product Compliant with DIN Standard: Coaxial and High Current Contact Composite Type) |
Hirose Electric |
| 577 |
PCN11FB-78S-2.54WB-2 |
PCN10F Series (Product Compliant with DIN Standard: Coaxial and High Current Contact Composite Type) |
Hirose Electric |
| 578 |
PNA4211F |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 579 |
PNA4K11F |
Opto Electronic Devices |
Panasonic |
| 580 |
PNJ4K11F |
Ambient Light and Proximity Sensor |
Panasonic |
| 581 |
R5011FNJ |
Nch 500V 11A Power MOSFET |
ROHM |
| 582 |
R5011FNJTL |
Nch 500V 11A Power MOSFET |
ROHM |
| 583 |
R5011FNX |
10V Drive Nch MOSFET |
ROHM |
| 584 |
RD11F |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE |
NEC |
| 585 |
RD11F-T6 |
Constant Voltage diode 1W DO-41 |
NEC |
| 586 |
RD11F-T7 |
Constant Voltage diode 1W DO-41 |
NEC |
| 587 |
RD11F-T8 |
Constant Voltage diode 1W DO-41 |
NEC |
| 588 |
RD11FM |
Constant Voltage diode 1W 2pin power mini mold |
NEC |
| 589 |
RN1111F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 590 |
RN1111FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 591 |
RN1911FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 592 |
RN1911FS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 593 |
RN2111F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
TOSHIBA |
| 594 |
RN2111FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 595 |
RN2911FE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 596 |
RN2911FS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 597 |
RN4911FE |
Transistor Silicon PNP � NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 598 |
S5411F |
Triple 3-Input Positive AND gate |
Signetics |
| 599 |
S54H11F |
Triple 3-Input Positive AND Gate |
Signetics |
| 600 |
SGSD311FI |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
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