| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2N815 |
Germanium NPN Transistor |
Motorola |
| 572 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 573 |
2N915 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 574 |
2N915 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 575 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 576 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 577 |
2N915 |
Silicon NPN Transistor |
Motorola |
| 578 |
2N915 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 579 |
2N915 |
Transistor |
SGS-ATES |
| 580 |
2N915 |
Silicon NPN Planar HF and switching Transistor |
TELEFUNKEN |
| 581 |
2PA1015 |
PNP general purpose transistor |
Philips |
| 582 |
2PC1815 |
NPN general purpose transistor |
Philips |
| 583 |
2SA1015 |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 584 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 585 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 586 |
2SA1115 |
2SA1115 |
Unknow |
| 587 |
2SA1115 |
2SA1115 |
Unknow |
| 588 |
2SA1215 |
POWER TRANSISTORS(15A,160V,150W) |
MOSPEC Semiconductor |
| 589 |
2SA1215 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
| 590 |
2SA1215 |
Silicon PNP Power Transistors MT-200 package |
Savantic |
| 591 |
2SA1215 |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 592 |
2SA1315 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 593 |
2SA1415 |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
| 594 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 595 |
2SA1515 |
Medium Power Transistor |
ROHM |
| 596 |
2SA1615 |
Silicon transistor |
NEC |
| 597 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 598 |
2SA2015 |
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications |
SANYO |
| 599 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 600 |
2SA315 |
High-Frequency Transistor SW BAND |
TOSHIBA |
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