| No. |
Part Name |
Description |
Manufacturer |
| 571 |
IRF9640 |
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 572 |
IRFP240 |
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 573 |
IRFP240 |
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET |
Intersil |
| 574 |
IRFP250 |
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 575 |
IRFP250 |
N-channel power MOSFET, 200V, 30A |
Samsung Electronic |
| 576 |
IRFP250N |
N-Channel Power MOSFET 200V, 30A, 0.075-Ohm |
Fairchild Semiconductor |
| 577 |
IRFP9240 |
12A, 200V, 0.500 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 578 |
IRFR13N20 |
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) |
International Rectifier |
| 579 |
IRFR220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 580 |
IRFR220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Intersil |
| 581 |
IRFR9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 582 |
IRFR9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Intersil |
| 583 |
IRFU220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 584 |
IRFU220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Intersil |
| 585 |
IRFU9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Intersil |
| 586 |
IRG4PH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
International Rectifier |
| 587 |
IRG4PH30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
| 588 |
IRG4PH30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
| 589 |
IRG4PH50 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
International Rectifier |
| 590 |
IRG4PSH71 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
International Rectifier |
| 591 |
IRG4PSH71 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
International Rectifier |
| 592 |
IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A) |
International Rectifier |
| 593 |
IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
International Rectifier |
| 594 |
IRGPH40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
International Rectifier |
| 595 |
IRGPH50 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
International Rectifier |
| 596 |
IRHNA53260 |
200V, N-CHANNEL |
International Rectifier |
| 597 |
IRHNA54260 |
200V, N-CHANNEL |
International Rectifier |
| 598 |
IRHNA57060 |
200V, N-CHANNEL |
International Rectifier |
| 599 |
IRLI620 |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A) |
International Rectifier |
| 600 |
IRLI640 |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A) |
International Rectifier |
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