No. |
Part Name |
Description |
Manufacturer |
571 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
572 |
NMC27C256BQM150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
573 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
574 |
NMC27C256Q17 |
170 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
575 |
NMC27C256Q20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
576 |
NMC27C256Q200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
577 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
578 |
NMC27C256Q250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
579 |
NMC27C256Q300 |
300 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
580 |
NMC27C256QE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
581 |
NMC27C256QE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
582 |
NMC27C256QM250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
583 |
NMC27C256QM350 |
350 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
584 |
NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM) |
NTE Electronics |
585 |
S6D0114 |
132-RGB X 176-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY |
Samsung Electronic |
586 |
TC514260BFT-70 |
70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
587 |
TC514260BFT-80 |
80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
588 |
TC514260BJ-70 |
70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
589 |
TC514260BJ-80 |
80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
590 |
TC554161AFT-10 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
591 |
TC554161AFT-10L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
592 |
TC554161AFT-10V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
593 |
TC554161AFT-70 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
594 |
TC554161AFT-70L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
595 |
TC554161AFT-70V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
596 |
TC554161AFT-85 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
597 |
TC554161AFT-85L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
598 |
TC554161AFT-85V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
599 |
TC554161AFTI-10 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
600 |
TC554161AFTI-10L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
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