| No. |
Part Name |
Description |
Manufacturer |
| 571 |
IRHYB597Z30CMSCS |
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package |
International Rectifier |
| 572 |
KSB596 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 573 |
KSB596 |
-80 V, -4 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 574 |
KSB596O |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 575 |
KSB596OTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 576 |
KSB596Y |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 577 |
KSB596YTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 578 |
KTB595 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 579 |
KTB598 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 580 |
M38B59EF-XXXFP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 581 |
M38B59EFFP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 582 |
M38B59EFFS |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 583 |
M38B59MFH-A126FP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 584 |
M38B59MFH-E106FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 585 |
M38B59MFH-E107FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 586 |
M38B59MFH-E110FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 587 |
M38B59MFH-E111FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 588 |
M38B59MFH-E112FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 589 |
M38B59MFH-P113FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 590 |
M38B59MMFH-XXXXFP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 591 |
NX8562LB597-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. Anode ground. FC-PC connector. |
NEC |
| 592 |
NX8563LB597 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 593 |
NX8563LB597-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 594 |
NX8563LB597-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 595 |
PB-IRFB59N10D |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 596 |
Q62702-B592 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 597 |
Q62702-B599 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 598 |
SB590 |
Through-Hole Schottky Rectifiers |
Diodes |
| 599 |
SB590 |
Schottky Barrier Rectifiers |
Diotec Elektronische |
| 600 |
SB590 |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
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