| No. |
Part Name |
Description |
Manufacturer |
| 571 |
BCY65ECP |
Low Noise NPN Transistor |
FERRANTI |
| 572 |
BCY65EIX |
Low Noise NPN Transistor |
FERRANTI |
| 573 |
BCY65EIX |
General purpose NPN transistor |
FERRANTI |
| 574 |
BCY65EP |
General purpose NPN transistor |
FERRANTI |
| 575 |
BCY65EP |
Low Noise NPN Transistor |
FERRANTI |
| 576 |
BCY65EVII |
Low Noise NPN Transistor |
FERRANTI |
| 577 |
BCY65EVII |
General purpose NPN transistor |
FERRANTI |
| 578 |
BCY65EVIII |
Low Noise NPN Transistor |
FERRANTI |
| 579 |
BCY65EVIII |
General purpose NPN transistor |
FERRANTI |
| 580 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 581 |
BD281 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of car radios |
SGS-ATES |
| 582 |
BD283 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 583 |
BD285 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 584 |
BD385 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
| 585 |
BD387 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
| 586 |
BD389 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
| 587 |
BD433 |
Silicon EPIBASE NPN transistor, medium power amplifier |
SGS-ATES |
| 588 |
BD437 |
SILICON EPITAXIAL BASE NPN POWER TRANSISTOR |
Micro Electronics |
| 589 |
BF173 |
0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. |
Continental Device India Limited |
| 590 |
BF182 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 10 hFE. |
Continental Device India Limited |
| 591 |
BF200 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 15 - 40 hFE. |
Continental Device India Limited |
| 592 |
BF257 |
1.000W General Purpose NPN Metal Can Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 593 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 594 |
BF259 |
1.000W General Purpose NPN Metal Can Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 595 |
BF370R |
0.500W High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.100A Ic, 40 hFE. |
Continental Device India Limited |
| 596 |
BF391 |
1.000W General Purpose NPN Plastic Leaded Transistor. 200V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 597 |
BF392 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 598 |
BF393 |
0.625W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 hFE. |
Continental Device India Limited |
| 599 |
BF420 |
0.800W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 600 |
BF422 |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
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