| No. |
Part Name |
Description |
Manufacturer |
| 571 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 572 |
AM82931-055 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 573 |
AM82931-055N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 574 |
AM82931-055S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 575 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 576 |
AMR960-35HE |
Linear Power Amplifier 35W, 925-960MHz, 26Vcc, designed for Cellular Radio GSM, NMT, E-TACS, AMPS applications |
Motorola |
| 577 |
ASS4148 |
Designed for mounting on small surface. |
Anachip |
| 578 |
ASS4148BD-0603 |
Designed for mounting on small surface. |
Anachip |
| 579 |
ASS4148BF-1005 |
Designed for mounting on small surface. |
Anachip |
| 580 |
AT75C140 |
This Smart Internet Appliance Processor is a high-performance processor specially designed for network-enabling consumer and industrial applications. The specific architecture of this device delivers unmatched performance for low power con |
Atmel |
| 581 |
AT75C220 |
A high-performance processor specially designed for professional Internet appliance applications, such as Ethernet IP phone. The device is built around an ARM7TDMI microcontroller with two Ethernet MAC interfaces. |
Atmel |
| 582 |
AT86RF210 |
The AT86RF210 Z-Link� Transceiver is an 868/915 MHz direct sequence spread spectrum BPSK transceiver designed for IEEE 802.15.4/ZigBee�-based systems; supports data rates of 20 kbps and 40 kbps, respectively. |
Atmel |
| 583 |
ATA7603 |
The ANADIGICS ATA7603 is a -5.2V high-speed transimpedance amplifier (TIA) designed for 10 Gb/s optical receiver applications available ... |
Anadigics Inc |
| 584 |
ATA7609 |
The ANADIGICS ATA7609 is a -5.2 V high-speed transimpedance amplifier (TIA) designed for 10 Gb/s optical receiver applications available ... |
Anadigics Inc |
| 585 |
B3-28 |
Specifically Designed for VHF Broadband Linear Power Amplifier |
Acrian |
| 586 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 587 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 588 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 589 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 590 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 591 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 592 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 593 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 594 |
BCY59 |
Silicon NPN epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY79 |
AEG-TELEFUNKEN |
| 595 |
BCY79 |
Silicon PNP epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY59 |
AEG-TELEFUNKEN |
| 596 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 597 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 598 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 599 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 600 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
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