| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2N7002 |
N-channel enhancement mode field-effect transistor |
Philips |
| 572 |
2SJ11 |
Field-effect transistor |
TOSHIBA |
| 573 |
2SJ12 |
Field-effect transistor |
TOSHIBA |
| 574 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 575 |
2SJ13 |
Field-effect transistor |
TOSHIBA |
| 576 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 577 |
2SK0658 |
Field-effect Transistor - Silicon N Channel MOS Type |
Panasonic |
| 578 |
2SK105 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 579 |
2SK113 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 580 |
2SK152 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 581 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 582 |
2SK363 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 583 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 584 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 585 |
2SK540 |
N-Channel Junction Field-Effect Transistor |
NEC |
| 586 |
3N124 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 587 |
3N124 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 588 |
3N125 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 589 |
3N125 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 590 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 591 |
3N126 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 592 |
3N128 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 593 |
3N128 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
| 594 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 595 |
3N138 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 596 |
3N138 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
| 597 |
3N139 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 598 |
3N139 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 599 |
3N139 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
| 600 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
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