| No. |
Part Name |
Description |
Manufacturer |
| 571 |
10ETS16STRR |
1600V 10A Std. Recovery Diode in a D2-Pakpackage |
International Rectifier |
| 572 |
10GL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE |
TOSHIBA |
| 573 |
10JL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 574 |
10JL2CZ47 |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 575 |
10JL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 576 |
10MQ040N |
40V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 577 |
10MQ040NTR |
40V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 578 |
10MQ060N |
60V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 579 |
10MQ060NTR |
60V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 580 |
10MQ100N |
100V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 581 |
10MQ100NTR |
100V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 582 |
10SI05 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 583 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
| 584 |
10SI05R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 585 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
| 586 |
10SI1 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 587 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 588 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 589 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
| 590 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 591 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
| 592 |
10SI1R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 593 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
| 594 |
10SI2 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 595 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
| 596 |
10SI2R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 597 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
| 598 |
10SI3 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 599 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
| 600 |
10SI3R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| | | |
