No. |
Part Name |
Description |
Manufacturer |
571 |
2N3055W |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
572 |
2N3174 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
573 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
574 |
2N3244 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
575 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
576 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
577 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
578 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
579 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
580 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
581 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
582 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
583 |
2N3441 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
584 |
2N3442 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
585 |
2N3442 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
586 |
2N3445 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
587 |
2N3447 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
588 |
2N3458 |
N channel field effect transistor (metal can) |
SESCOSEM |
589 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
590 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
591 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
592 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
593 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
594 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
595 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
596 |
2N3501 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
597 |
2N3535 |
Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
598 |
2N3558 |
Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
599 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
600 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
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