| No. |
Part Name |
Description |
Manufacturer |
| 571 |
HM514400A/AL/ASL SERIES |
1,048,576-word x 4-bit Dynamic RAM |
Hitachi Semiconductor |
| 572 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
| 573 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
| 574 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
| 575 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
| 576 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
| 577 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
| 578 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
| 579 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
| 580 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
| 581 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
| 582 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
| 583 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
| 584 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
| 585 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
| 586 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
| 587 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
| 588 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
| 589 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
| 590 |
HYB3116160BSJ |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 591 |
HYB3116160BSJ-50 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 592 |
HYB3116160BSJ-60 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 593 |
HYB3116160BSJ-70 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 594 |
HYB3116160BST-50 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 595 |
HYB3116160BST-60 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 596 |
HYB3116160BST-70 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 597 |
HYB3116400BJ-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
| 598 |
HYB3116400BJBTL-50 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
| 599 |
HYB3116400BJBTL-50 |
-3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
| 600 |
HYB3116400BT-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
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