| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 572 |
2SC509 |
Silicon NPN epitaxial planar medium power transistor, complementary to 2SA509 |
TOSHIBA |
| 573 |
2SC790 |
Silicon NPN triple diffused power transistor, complementary to 2SA490 |
TOSHIBA |
| 574 |
2SD1148 |
Silicon NPN triple diffused power transistor, complementary to 2SB863 |
TOSHIBA |
| 575 |
2SD1355 |
Silicon NPN triple diffused power transistor, complementary to 2SB995 |
TOSHIBA |
| 576 |
2SD1356 |
Silicon NPN triple diffused power transistor, complementary to 2SB996 |
TOSHIBA |
| 577 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 578 |
2SD1486 |
Complementary pair with 2SB1055 |
Panasonic |
| 579 |
2SD1603 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
| 580 |
2SD1604 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
| 581 |
2SD1608 |
Power Transistor - Silicon NPN Triple Diffused Planar Darlington Type - Complementary Pair with 2SB1108 |
Panasonic |
| 582 |
2SD1819 |
Transistor - Silicon NPN Epitaxial Planar Type - For general amplification - Complementary pair with 2SB1218 and 2SB1218A |
Panasonic |
| 583 |
2SD1994 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A |
Panasonic |
| 584 |
2SD2181 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency output amplification - Complementary pair with 2SB1437 |
Panasonic |
| 585 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
| 586 |
2SD234G |
Silicon NPN diffused junction power transistor, complementary to 2SB434G |
TOSHIBA |
| 587 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 588 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
| 589 |
2SD582 |
80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A |
Unknow |
| 590 |
2SD582 |
80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A |
Unknow |
| 591 |
2SD582A |
80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A |
Unknow |
| 592 |
2SD666 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A |
Hitachi Semiconductor |
| 593 |
2SD666A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A |
Hitachi Semiconductor |
| 594 |
2SD673A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A |
Unknow |
| 595 |
2SD716 |
Silicon NPN triple diffused power transistor, complementary to 2SB686 |
TOSHIBA |
| 596 |
2SD757 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 597 |
2SD758 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 598 |
2SD845 |
Silicon NPN triple diffused power transistor, complementary to 2SB755 |
TOSHIBA |
| 599 |
2SD96 |
Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 600 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| | | |
