| No. |
Part Name |
Description |
Manufacturer |
| 571 |
RZ1214B125W |
Pulsed Microwave Power NPN Transistor for L-BAND Radar |
Philips |
| 572 |
RZ1214B125Y |
Pulsed Microwave Power NPN Transistor |
Philips |
| 573 |
RZ1214B60W |
Pulsed Microwave Power NPN Transistor for L-BAND Radar |
Philips |
| 574 |
RZ3135B15U |
Pulsed Power NPN Transistor for S-BAND Radar |
Philips |
| 575 |
RZ3135B15W |
Pulsed Power NPN Transistor for S-BAND Radar |
Philips |
| 576 |
RZ3135B25U |
Pulsed Power NPN Transistor for S-BAND Radar |
Philips |
| 577 |
RZ3135B30W |
Pulsed Power NPN Transistor for S-BAND Radar |
Philips |
| 578 |
RZB12100Y |
Pulsed Microwave Power NPN Transistor |
Philips |
| 579 |
RZB12250Y |
Pulsed Microwave Power NPN Transistor |
Philips |
| 580 |
RZZ1214B300Y |
Pulsed Microwave Power NPN Transistor |
Philips |
| 581 |
SD1136 |
UHF power NPN transistor, 10W, 16V |
SGS Thomson Microelectronics |
| 582 |
SD1170 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 583 |
SD1171 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 584 |
SD1176 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 585 |
SD1830 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 586 |
SD1831 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 587 |
SD1833 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 588 |
SD1835 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 589 |
SFT5671 |
200 V, 30 A high power NPN transistor |
Solid State Devices Inc |
| 590 |
SFT5672 |
250 V, 30 A high power NPN transistor |
Solid State Devices Inc |
| 591 |
SGSD310 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 592 |
SGSD311 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 593 |
SGSD311FI |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 594 |
SGSF461 |
125W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 595 |
SGSF561 |
150W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 596 |
SGSIF461 |
65W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 597 |
TCC3000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 598 |
TCC3001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 599 |
TCC3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 600 |
TCC3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
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