| No. |
Part Name |
Description |
Manufacturer |
| 571 |
BF316A |
Epitaxial planar PNP transistor designed for use as oscillator-mixer in TV tuners |
SGS-ATES |
| 572 |
BFG34 |
Silicon-epitaxial NPN transistor designed for wideband application in CATV and MATV |
Philips |
| 573 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 574 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 575 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 576 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 577 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 578 |
BFX11 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 579 |
BFX15 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 580 |
BFX16 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 581 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 582 |
BFX36 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 583 |
BFX70 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 584 |
BFX71 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 585 |
BFX72 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 586 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 587 |
BFX99 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 588 |
BFY81 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 589 |
BFY82 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 590 |
BFY83 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 591 |
BFY84 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 592 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 593 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 594 |
BLV90SL |
UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band |
Philips |
| 595 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 596 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 597 |
BU126 |
Tranzystor du�ej mocy wysokonapi�ciowy |
Ultra CEMI |
| 598 |
BU204 |
Tranzystor du�ej mocy wysokonapi�ciowy |
Ultra CEMI |
| 599 |
BU205 |
Tranzystor du�ej mocy wysokonapi�ciowy |
Ultra CEMI |
| 600 |
BU206 |
Tranzystor du�ej mocy wysokonapi�ciowy |
Ultra CEMI |
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