No. |
Part Name |
Description |
Manufacturer |
571 |
HYB3165800AT-50 |
8M x 8 Bit 4k DRAM |
Infineon |
572 |
HYB3165800AT-60 |
8M x 8 Bit 4k DRAM |
Infineon |
573 |
HYB3165805AJ-50 |
8M x 8 Bit 4k EDO DRAM |
Infineon |
574 |
HYB3165805AJ-60 |
8M x 8 Bit 4k EDO DRAM |
Infineon |
575 |
HYB3165805AT-50 |
8M x 8 Bit 4k EDO DRAM |
Infineon |
576 |
HYB3165805AT-60 |
8M x 8 Bit 4k EDO DRAM |
Infineon |
577 |
HYB3165805ATL-50 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
578 |
HYB3165805ATL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
579 |
HYB5116400BJ-50 |
4M x 4 Bit 4k 5 V 50 ns FPM DRAM |
Infineon |
580 |
HYB5116400BJ-60 |
4M x 4 Bit 4k 5 V 60 ns FPM DRAM |
Infineon |
581 |
HYB5116405BJ-50 |
4M x 4 Bit 4k 5 V 50 ns EDO DRAM |
Infineon |
582 |
HYB5116405BJ-60 |
4M x 4 Bit 4k 5 V 60 ns EDO DRAM |
Infineon |
583 |
ICL7662 |
Voltage Inverter, �15V, Input 4.5-20V, or Voltage Doubler to 38.6V |
Intersil |
584 |
IFC125-40-1 |
AC/DC open frame. 125 Watts. Output 1: Vnom 2.5V, Imax 12.5A. Output 2: Vnom 5.0V, Imax 15.0A. Output 3: Vnom 12.0V, Imax 5.0A. Output 4: Vnom -12.0V, Imax 0.5A. |
International Power Sources |
585 |
IFC125-42-3 |
AC/DC open frame. 125 Watts. Output 1: Vnom 3.3V, Imax 10.0A. Output 2: Vnom 5.0V, Imax 15.0A. Output 3: Vnom 12.0V, Imax 5.0A. Output 4: Vnom -12.0V, Imax 0.5A. |
International Power Sources |
586 |
IH311 |
High Speed SPST 4-Channel Analog Switch |
Intersil |
587 |
IH312 |
High Speed SPST 4-Channel Analog Switch |
Intersil |
588 |
IR2403 |
7- UNIT 400MA DARLINGTON TRANSISTOR ARRAY |
SHARP |
589 |
IR3891M |
Dual Ouput 4A per phase Highly Integrated Single-Input Voltage, Synchronous Buck Regulator in a PQFN package. |
International Rectifier |
590 |
IR3891MTR1PBF |
Dual Ouput 4A per phase Highly Integrated Single-Input Voltage, Synchronous Buck Regulator in a PQFN package. |
International Rectifier |
591 |
IR3891MTRPBF |
Dual Ouput 4A per phase Highly Integrated Single-Input Voltage, Synchronous Buck Regulator in a PQFN package. |
International Rectifier |
592 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
593 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
594 |
IRF352 |
Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
595 |
IRF3521 |
Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
596 |
IRF352R |
Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
597 |
IRF451 |
Trans MOSFET 450V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
598 |
IRF453 |
Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
599 |
IRF6662 |
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes. |
International Rectifier |
600 |
IRF6662TR1 |
Leaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes. |
International Rectifier |
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