No. |
Part Name |
Description |
Manufacturer |
571 |
2N5904 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
572 |
2N5905 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
573 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
574 |
2N5906 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
575 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
576 |
2N5907 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
577 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
578 |
2N5908 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
579 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
580 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
581 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
582 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
583 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
584 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
585 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
586 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
587 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
588 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
589 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
590 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
591 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
592 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
593 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
594 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
595 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
596 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
597 |
2N681 |
Reverse Blocking Triode Thiristor (SCR) |
Transitron Electronic |
598 |
2N682 |
Reverse Blocking Triode Thiristor (SCR) |
Transitron Electronic |
599 |
2N683 |
Reverse Blocking Triode Thiristor (SCR) |
Transitron Electronic |
600 |
2N684 |
Reverse Blocking Triode Thiristor (SCR) |
Transitron Electronic |
| | | |