| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2SC2458L |
TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 572 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 573 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 574 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 575 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 576 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
| 577 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 578 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
| 579 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 580 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 581 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 582 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 583 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 584 |
2SC3268 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 585 |
2SC3302 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 586 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 587 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 588 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 589 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 590 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 591 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 592 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 593 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
| 594 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 595 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 596 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 597 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 598 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 599 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 600 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
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