| No. |
Part Name |
Description |
Manufacturer |
| 5761 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5762 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5763 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5764 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5765 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5766 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5767 |
W562M02 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (2 min) |
Winbond Electronics |
| 5768 |
W562S08 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (8 seconds) |
Winbond Electronics |
| 5769 |
W562S10 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (10 seconds) |
Winbond Electronics |
| 5770 |
W562S12 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (12 seconds) |
Winbond Electronics |
| 5771 |
W562S15 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (15 seconds) |
Winbond Electronics |
| 5772 |
W562S20 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (20 seconds) |
Winbond Electronics |
| 5773 |
W562S25 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (25 seconds) |
Winbond Electronics |
| 5774 |
W562S30 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (30 seconds) |
Winbond Electronics |
| 5775 |
W562S40 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (40 seconds) |
Winbond Electronics |
| 5776 |
W562S50 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (50 seconds) |
Winbond Electronics |
| 5777 |
W562S60 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (60 seconds) |
Winbond Electronics |
| 5778 |
W562S80 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (80 seconds) |
Winbond Electronics |
| 5779 |
W562S99 |
2 Tone Melody & ADPCM Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (99 seconds) |
Winbond Electronics |
| 5780 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5781 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5782 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5783 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5784 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5785 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5786 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5787 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 5788 |
W83627SF |
W83627F plus Smart Card Reader Interface, VID Control, GP I/O |
Winbond Electronics |
| 5789 |
W83637HF-AW |
Winbond SMART@IO with H/W Monitor, PC/SC I/F, Memory Stick(TM)/SD/MMC Card I/F |
Winbond Electronics |
| 5790 |
W83697SF |
W83697F plus Smart Card Reader Interface, GP I/O |
Winbond Electronics |
| | | |
