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Datasheets for 0.3

Datasheets found :: 5913
Page: | 189 | 190 | 191 | 192 | 193 | 194 | 195 | 196 | 197 |
No. Part Name Description Manufacturer
5761 STM812LW16F 320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit SGS Thomson Microelectronics
5762 STM812MW16F 320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit SGS Thomson Microelectronics
5763 STM812RW16F 320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit SGS Thomson Microelectronics
5764 STM812SW16F 320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit SGS Thomson Microelectronics
5765 STM812TW16F 320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit SGS Thomson Microelectronics
5766 STP15N80K5 N-channel 800 V, 0.3 Ohm typ., 14 A SuperMESH(TM) 5 Power MOSFET in TO-220 package ST Microelectronics
5767 STP7NE10 N - CHANNEL 100V - 0.3 Ohm - 7A - TO-220 STripFET POWER MOSFET SGS Thomson Microelectronics
5768 STP7NE10 N-CHANNEL 100V - 0.3 OHM - 7A - TO-220 STRIPFET POWER MOSFET ST Microelectronics
5769 STP7NE10L N - CHANNEL 100V - 0.3 Ohms - 7A - TO-220 STripFET POWER MOSFET SGS Thomson Microelectronics
5770 STP7NE10L N-CHANNEL 100V - 0.3 OHM - 7A - TO-220 STRIPFET POWER MOSFET ST Microelectronics
5771 STQ1NE10L N-CHANNEL 100V - 0.3 OHM - 1A TO-92 STRIPFET POWER MOSFET ST Microelectronics
5772 STQ1NE10L-AP N-CHANNEL 100V - 0.3 OHM - 1A TO-92 STRIPFET POWER MOSFET ST Microelectronics
5773 STW15N80K5 N-channel 800 V, 0.3 Ohm typ., 14 A SuperMESH(TM) 5 Power MOSFET in TO-247 package ST Microelectronics
5774 STW16NB60 N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET SGS Thomson Microelectronics
5775 STW16NB60 N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET ST Microelectronics
5776 T6668 -0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM system TOSHIBA
5777 T6668 -0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM system TOSHIBA
5778 TA1242N V(cc):12V / 2.19W / V(in): -0.3 to +0.3V / NTSC system / I2C bus supported TOSHIBA
5779 TC5517CF-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5780 TC5517CF-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5781 TC5517CF-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5782 TC5517CF-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5783 TC5517CFL-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5784 TC5517CFL-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5785 TC5517CFL-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5786 TC5517CFL-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5787 TC5517CP-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5788 TC5517CP-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5789 TC5517CP-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
5790 TC5517CP-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA


Datasheets found :: 5913
Page: | 189 | 190 | 191 | 192 | 193 | 194 | 195 | 196 | 197 |



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