No. |
Part Name |
Description |
Manufacturer |
5761 |
STM812LW16F |
320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit |
SGS Thomson Microelectronics |
5762 |
STM812MW16F |
320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit |
SGS Thomson Microelectronics |
5763 |
STM812RW16F |
320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit |
SGS Thomson Microelectronics |
5764 |
STM812SW16F |
320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit |
SGS Thomson Microelectronics |
5765 |
STM812TW16F |
320mW; I(o): 20mA; V(cc): -0.3 to +7.0V; reset circuit |
SGS Thomson Microelectronics |
5766 |
STP15N80K5 |
N-channel 800 V, 0.3 Ohm typ., 14 A SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
5767 |
STP7NE10 |
N - CHANNEL 100V - 0.3 Ohm - 7A - TO-220 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
5768 |
STP7NE10 |
N-CHANNEL 100V - 0.3 OHM - 7A - TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
5769 |
STP7NE10L |
N - CHANNEL 100V - 0.3 Ohms - 7A - TO-220 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
5770 |
STP7NE10L |
N-CHANNEL 100V - 0.3 OHM - 7A - TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
5771 |
STQ1NE10L |
N-CHANNEL 100V - 0.3 OHM - 1A TO-92 STRIPFET POWER MOSFET |
ST Microelectronics |
5772 |
STQ1NE10L-AP |
N-CHANNEL 100V - 0.3 OHM - 1A TO-92 STRIPFET POWER MOSFET |
ST Microelectronics |
5773 |
STW15N80K5 |
N-channel 800 V, 0.3 Ohm typ., 14 A SuperMESH(TM) 5 Power MOSFET in TO-247 package |
ST Microelectronics |
5774 |
STW16NB60 |
N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET |
SGS Thomson Microelectronics |
5775 |
STW16NB60 |
N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET |
ST Microelectronics |
5776 |
T6668 |
-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM system |
TOSHIBA |
5777 |
T6668 |
-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM system |
TOSHIBA |
5778 |
TA1242N |
V(cc):12V / 2.19W / V(in): -0.3 to +0.3V / NTSC system / I2C bus supported |
TOSHIBA |
5779 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5780 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5781 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5782 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5783 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5784 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5785 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5786 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5787 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5788 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5789 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
5790 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
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