| No. |
Part Name |
Description |
Manufacturer |
| 5761 |
MBR20H100FCT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=20A |
Comchip Technology |
| 5762 |
MBR20H100FCT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=20A |
Comchip Technology |
| 5763 |
MBR20H200FCT-G |
Schottky Barrier Rectifiers Diodes, VRRM=200V, VR=200V, IO=20A |
Comchip Technology |
| 5764 |
MBR20H200FCT-G |
Schottky Barrier Rectifiers Diodes, VRRM=200V, VR=200V, IO=20A |
Comchip Technology |
| 5765 |
MBR30H100CT |
100V, 30A SWITCHMODE Power Rectifier |
ON Semiconductor |
| 5766 |
MBR40H100WT |
100V, 40A SWITCHMODE Power Rectifier |
ON Semiconductor |
| 5767 |
MBR41H100CT |
100V, 40A SWITCHMODE Power Rectifier |
ON Semiconductor |
| 5768 |
MBR60H100CT |
100V, 60A SWITCHMODE Power Rectifier |
ON Semiconductor |
| 5769 |
MBRF10100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 5770 |
MBRF10100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 5771 |
MBRF10100CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 5772 |
MBRF10100CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 5773 |
MDB10S |
1A, 1000V, MicroDIP, Single-Phase Bridge Rectifier |
Fairchild Semiconductor |
| 5774 |
MDB6S |
1A, 600V, MicroDIP, Single-Phase Bridge Rectifier |
Fairchild Semiconductor |
| 5775 |
MDB8S |
1A, 800V, MicroDIP, Single-Phase Bridge Rectifier |
Fairchild Semiconductor |
| 5776 |
MG100H2YL1 |
NPN transistor for high power switching and notor control applications, 600V, 100A |
Westcode Semiconductors |
| 5777 |
MG100M2YK1 |
NPN transistor for high power switching and notor control applications, 1000V, 100A |
Westcode Semiconductors |
| 5778 |
MG100Q2YK1 |
NPN transistor for high power switching and notor control applications, 1200V, 100A |
Westcode Semiconductors |
| 5779 |
MG150M2YK1 |
NPN transistor for high power switching and notor control applications, 1000V, 150A |
Westcode Semiconductors |
| 5780 |
MG150Q2YK1 |
NPN transistor for high power switching and notor control applications, 1200V, 150A |
Westcode Semiconductors |
| 5781 |
MG200M1UK1 |
NPN transistor for high power switching and notor control applications, 1000V, 200A |
Westcode Semiconductors |
| 5782 |
MG200Q1UK1 |
NPN transistor for high power switching and notor control applications, 1200V, 200A |
Westcode Semiconductors |
| 5783 |
MG300M1UK1 |
NPN transistor for high power switching and notor control applications, 1000V, 300A |
Westcode Semiconductors |
| 5784 |
MG300Q1UK1 |
NPN transistor for high power switching and notor control applications, 1200V, 300A |
Westcode Semiconductors |
| 5785 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
| 5786 |
MJD122-1 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 5787 |
MJD122-1 |
NPN transistor for high DC current gain, 100V, 8A |
ON Semiconductor |
| 5788 |
MJD122-1 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 5789 |
MJD122T4 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 5790 |
MJD122T4 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
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