| No. |
Part Name |
Description |
Manufacturer |
| 5761 |
2SB815 |
PNP Epitaxial Planar Silicon Transistors General-Purpose AF Amplifier Applications |
SANYO |
| 5762 |
2SB817 |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 5763 |
2SB817P |
General-Purpose Amplifier Transistors |
SANYO |
| 5764 |
2SB852KT146B |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
| 5765 |
2SB905 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications |
TOSHIBA |
| 5766 |
2SB906 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5767 |
2SB907 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 5768 |
2SB908 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 5769 |
2SB945 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 5770 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 5771 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 5772 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 5773 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 5774 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 5775 |
2SC1079 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
| 5776 |
2SC1080 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
| 5777 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 5778 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 5779 |
2SC1166 |
Silicon NPN epitaxial planar transistor, driver stage amplifier applications, complementary to 2SA661 |
TOSHIBA |
| 5780 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
| 5781 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 5782 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 5783 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 5784 |
2SC1377 |
Silicon NPN epitaxial planar transistor, 27MHz, SSB, AM power amplifier applications |
TOSHIBA |
| 5785 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 5786 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 5787 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 5788 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 5789 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 5790 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
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