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Datasheets for POW

Datasheets found :: 176488
Page: | 190 | 191 | 192 | 193 | 194 | 195 | 196 | 197 | 198 |
No. Part Name Description Manufacturer
5791 2N4378 Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts Powerex Power Semiconductors
5792 2N4387 PNP Silicon Medium Power Transistor (up to 25 watts) Transitron Electronic
5793 2N4388 PNP Silicon Medium Power Transistor (up to 25 watts) Transitron Electronic
5794 2N4398 Leaded Power Transistor General Purpose Central Semiconductor
5795 2N4398 Silicon PNP Power Transistors TO-3 package Savantic
5796 2N4398 Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5301 Silicon Transistor Corporation
5797 2N4398 -40 V, -30 A, 200 W, PNP silicon power transistor Texas Instruments
5798 2N4398 Silicon PNP triple diffused power transistor TOSHIBA
5799 2N4399 Leaded Power Transistor General Purpose Central Semiconductor
5800 2N4399 Silicon PNP Power Transistors TO-3 package Savantic
5801 2N4399 Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5302 Silicon Transistor Corporation
5802 2N4399 -60 V, -30 A, 200 W, PNP silicon power transistor Texas Instruments
5803 2N4399 Silicon PNP triple diffused power transistor TOSHIBA
5804 2N4400 Medium power NPN transistor FERRANTI
5805 2N4401 Medium power NPN transistor FERRANTI
5806 2N4402 Medium power PNP transistors FERRANTI
5807 2N4403 Medium power PNP transistors FERRANTI
5808 2N441 Germanium power transistor COSEM
5809 2N441 PNP germanium power transistor, Power and temperature exceed EIA registration Motorola
5810 2N441 PNP germanium power transistor, Power and temperature exceed EIA registration Motorola
5811 2N441 Germanium PNP Power Transistor, TO-36 Package Silicon Transistor Corporation
5812 2N442 PNP germanium power transistor, Power and temperature exceed EIA registration Motorola
5813 2N442 PNP germanium power transistor, Power and temperature exceed EIA registration Motorola
5814 2N442 Germanium PNP Power Transistor, TO-36 Package Silicon Transistor Corporation
5815 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi
5816 2N4427 R.F. power transistor Mullard
5817 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
5818 2N4427 VHF OSCILLATOR POWER AMPLIFIER ST Microelectronics
5819 2N4428 NPN silicon RF power transistor 0.75W - 500MHz Motorola
5820 2N4429 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor


Datasheets found :: 176488
Page: | 190 | 191 | 192 | 193 | 194 | 195 | 196 | 197 | 198 |



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